RN2908FE(TE85L,F)

Toshiba Semiconductor and Storage

RN2908FE(TE85L,F)
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Part No. RN2908FE(TE85L,F)
Manufacturer Toshiba Semiconductor and Storage
Description TRANS 2PNP PREBIAS 0.1W ES6
Lead Free Status / RoHS Status Lead free / RoHS Compliant
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Reference Price
(In US Dollars)
4000 pcs
$0.065
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Total:
$0.065

Specifications

Data sheet

Voltage - Collector Emitter Breakdown (Max):50V
Vce Saturation (Max) @ Ib, Ic:300mV @ 250µA, 5mA
Transistor Type:2 PNP - Pre-Biased (Dual)
Supplier Device Package:ES6
Series:-
Resistor - Emitter Base (R2):47 kOhms
Resistor - Base (R1):22 kOhms
Power - Max:100mW
Packaging:Tape & Reel (TR)
Package / Case:SOT-563, SOT-666
Other Names:RN2908FE(TE85LF)TR
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Frequency - Transition:200MHz
Detailed Description:Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 100mW Surface Mount ES6
DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 10mA, 5V
Current - Collector Cutoff (Max):100nA (ICBO)
Current - Collector (Ic) (Max):100mA
Email:rfq@blueschip-store.com

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